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Stacking-induced type-II quantum spin Hall insulators with high spin Chern number in unconventional magnetism

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Stacking-induced type-II quantum spin Hall insulators with high spin Chern number in unconventional magnetism 论文配图

Chao-Yang Tan, Panjun Feng, Ze-Feng Gao, Fengjie Ma, Peng-Jie Guo#, Zhong-Yi Lu#

Science Bulletin, 71(9): 2196-2199, 2026

摘要

In this letter, based on the calculations of lattice model, we demonstrate that stacking two type-II quantum spin Hall insulators does not yield a trivial insulator, but instead forms a quantum spin Hall insulator with high spin Chern number. In this phase, there are two pairs of topological edge states with opposite chirality and polarization coexisting in the boundary.